In this paper, samples used are oriented 6H-SiC <0001> surface supplied by the MIT company. They were cutinto 10 mm10 mm10 mm in size. The 6H-SiC wafers were implanted with 300 keV He ions to a fluence of 11017cm?2 at 600?C. The implantation experiment was performed at the 320 kV Multi-discipline Research Platform for Highly Charged Ions of the Institute of Modern Physics,Chinese Academy of Sciences (CAS). The 300 keV Heions were implanted into 6H-SiC in vacuum (210?4Pa) and the current density was approximately 0.8A/cm2. After He implantation, the samples wereisochronally annealed at 750 and 1 200 ?C for 30 min,respectively, with the GSL1700X high-temperature vacuumsintering furnace in Ar atmosphere.
YBa2Cu3O7-x （YBCO） superconducting film was fabricated on {001} LaAlO3 （LAO） substrate by pulse laser deposition （PLD）, and its microstructure was examined by high resolution X-ray diffraction technology （HRXRD）, such as pole figure, rocking curve, reciprocal space mapping. The results show that the YBCO crystalline alignment is almost {001}YBCO//{001}LAO, 100YBCO//100LAO besides 2% {001}YBCO//{001}LAO, 110YBCO//100LAO. The out-plane alignment of YBCO is some spreading （the breadth is 0.75°）. There are 90°±0.65°110 twin domains in the film, which is caused by the high local stress and stress difference between 100 and 010 during the tetragonal to orthorhombic phase transition.
