Two-dimensional(2D)transition metal dichalcogenides(TMDs)have garnered widespread interest in the scientific community and industry for their exceptional physical and chemistry properties,and great potential for applications in diverse fields including(opto)electronics,electrocatalysis,and energy storage.Chemical vapor deposition(CVD)is one of the most compelling growth methods for the scalable growth of high-quality 2D TMDs.However,the conventional CVD process for synthesis of 2D TMDs still encounters significant challenges,primarily attributed to the high melting point of precursor powders,and achieving a uniform distribution of precursor atmosphere on the substrate to obtain controllable smaple domains is difficult.The spin-coating precursor mediated chemical vapor deposition(SCVD)strategy provides refinement over traditional methods by eliminating the use of solid precursors and ensuring a more clean and uniform distribution of the growth material on the substrate.Additionally,the SCVD process allows fine-tuning of material thickness and purity by manipulating solution composition,concentration,and the spin coating process.This Review presents a comprehensive summary of recent advances in controllable growth of 2D TMDs with a SCVD strategy.First,a series of various liquid precursors,additives,source supply methods,and substrate engineering strategies for preparing atomically thin TMDs by SCVD are introduced.Then,2D TMDs heterostructures and novel doped TMDs fabricated through the SCVD method are discussed.Finally,the current challenges and perspectives to synthesize 2D TMDs using SCVD are discussed.
Interface engineering in device fabrication is a significant but complicated issue.Although great successes have been achieved by conventional physical in situ or ex situ methods,it still suffers from complicated procedures.In this work,we present a facile method for fabricating phthalocyanine(Pc)-based two-dimensional conductive metal–organic framework(MOF)films.Based on PcM-Cu(M=Ni,Cu,H_(2))MOF films,spin valves with a vertical configuration of La_(0.67)Sr_(0.33)MnO_(3)/PcM-Cu MOFs/Co were constructed successfully,and exhibited notably high negative magnetoresistance(MR)up to -22% at 50 K.The penetrated Co atoms coordinated with the dehydrogenated hydroxy groups in the MOFs resulting in an antiferromagnetic layer of the PcM-Cu-Co hybrid structure.Interestingly,a significant exchange bias effect was demonstrated at the PcM-Cu MOF/Co interface,beneficial for the MR behavior.Thus,our present study provides new insights into developing high-performance organic spin valves via de novo molecular design.
In this study,a new method was developed to realize two-dimensional(2D)figure correction of grazing-incidence X-ray mirrors using a one-dimensional(1D)ion-beam figuring system.A mask of holes was specifically designed to generate removal functions at different widths and extend the figuring capability over a wide area.Accordingly,a long mirror could be manufactured.Using this method,the surface height root-mean-square(RMS)error of the center area of 484 mm×16 mm was reduced from 11.49 nm to 2.01 nm,and the 1D meridional RMS error reached 1.0 nm.The proposed method exhibits high precision and cost effectiveness for production of long X-ray mirrors.
Qiu-Shi HuangHan-Dan HuangQiao-Yu WuJun YuZhong ZhangZhan-Shan Wang
Succeeding graphene a series of two‐dimensional materials(2D M)have been developed and applied in various fields.As an analog of silicene,2D germa-nium(2D Ge)has garnered vast attention owing to its novel structures and prolific properties,demonstrating substantial promise in semiconductor,catal-ysis,devices,and other burgeoning fields.Specifically,2D Ge is advantageous in providing a massive specific surface area,preferable transport properties,a tunable band gap structure,and confinement effects.Endowed with unique features,functionalized 2D Ge has become a competitive candidate for pho-tocatalysis.In this review,we catalog various synthetic methods of 2D Ge,discuss its fundamental properties,and summarize recent applications.We also present a few perspectives to provide fresh insights into designing and exploring 2D germanium in future photocatalysis.
Chengcheng ZhangGuanshu ZhaoDake ZhangShenghua WangWei Sun
The electron's charge and spin degrees of freedom are at the core of modern electronic devices. With the in-depth investigation of two-dimensional materials, another degree of freedom, valley, has also attracted tremendous research interest. The intrinsic spontaneous valley polarization in two-dimensional magnetic systems, ferrovalley material, provides convenience for detecting and modulating the valley. In this review, we first introduce the development of valleytronics.Then, the valley polarization forms by the p-, d-, and f-orbit that are discussed. Following, we discuss the investigation progress of modulating the valley polarization of two-dimensional ferrovalley materials by multiple physical fields, such as electric, stacking mode, strain, and interface. Finally, we look forward to the future developments of valleytronics.
The high stretchability of two-dimensional(2D)materials has facilitated the possibility of using external strain to manipulate their properties.Hence,strain engineering has emerged as a promising technique for tailoring the performance of 2D materials by controlling the applied elastic strain field.Although various types of strain engineering methods have been proposed,deterministic and controllable generation of the strain in 2D materials remains a challenging task.Here,we report a nanoimprint-induced strain engineering(NISE)strategy for introducing controllable periodic strain profiles on 2D materials.A three-dimensional(3D)tunable strain is generated in a molybdenum disulfide(MoS_(2))sheet by pressing and conforming to the topography of an imprint mold.Different strain profiles generated in MoS_(2)are demonstrated and verified by Raman and photoluminescence(PL)spectroscopy.The strain modulation capability of NISE is investigated by changing the imprint pressure and the patterns of the imprint molds,which enables precise control of the strain magnitudes and distributions in MoS_(2).Furthermore,a finite element model is developed to simulate the NISE process and reveal the straining behavior of MoS_(2).This deterministic and effective strain engineering technique can be easily extended to other materials and is also compatible with common semiconductor fabrication processes;therefore,it provides prospects for advances in broad nanoelectronic and optoelectronic devices.
Chuying SunJianwen ZhongZhuofei GanLiyang ChenChuwei LiangHongtao FengZhao SunZijie JiangWen-Di Li
Among the various two-dimensional(2D)materials,more than 99%of them are noncentrosymmetric.However,since the commonly used substrates are generally centrosymmetric,antiparallel islands are usually inevitable in the growth of noncentrosymmetric 2D materials because of the energetic equivalency of these two kinds of antiparallel islands on centrosymmetric substrates.Therefore,achieving the growth of noncentrosymmetric 2D single crystals has long been a great challenge compared with the centrosymmetric ones like graphene.In this review,we presented the remarkable efforts and progress in the past decade,through precise chemical processes.We first discussed the great challenge and possible strategies in the growth of noncentrosymmetric 2D single crystals.Then,we focused on the advancements made in producing representative noncentrosymmetric 2D single crystals,including hexagonal boron nitride(hBN),transition metal dichalcogenides(TMDs),and other noncentrosymmetric 2D materials.At last,we summarized and looked forward to future research on the growth of layer-,stacking-,and twist-controlled noncentrosymmetric 2D single crystals and their heterostructures.
Guoliang CuiJiajie QiZhihua LiangFankai ZengXiaowen ZhangXiaozhi XuKaihui Liu
Two-dimensional(2D)materials have attracted tremendous interest in view of the outstanding optoelectronic properties,showing new possibilities for future photovoltaic devices toward high performance,high specific power and flexibility.In recent years,substantial works have focused on 2D photovoltaic devices,and great progress has been achieved.Here,we present the review of recent advances in 2D photovoltaic devices,focusing on 2D-material-based Schottky junctions,homojunctions,2D−2D heterojunctions,2D−3D heterojunctions,and bulk photovoltaic effect devices.Furthermore,advanced strategies for improving the photovoltaic performances are demonstrated in detail.Finally,conclusions and outlooks are delivered,providing a guideline for the further development of 2D photovoltaic devices.
Field-effect transistors are essential components of modern electronics.Nowadays,the continued scaling of electronic and optoelectronic devices is bringing silicon-based technologies close to their physical limits,causing issues such as short-channel effects[1].Two-dimensional(2D)semiconductors provide an attractive solution for transistors to extend Moore’s law because of their ultrathin thickness and immunity to short-channel effects[2].To fulfill the potential of 2D semiconductors,gate dielectrics need to be simultaneously engineered to build future 2D-material-based transistors.Gate insulators with high dielectric constants(j)exhibit lower equivalent oxide thickness,which can ensure efficient gate control over channels and low gate leakage[3].Therefore,tremendous efforts have been made in searching for novel high-j dielectrics.
